22
edits
Sandbox: Difference between revisions
From OpenWetWare
Jump to navigationJump to search
no edit summary
No edit summary |
No edit summary |
||
| Line 3: | Line 3: | ||
'''Dry etching''' (also known as plasma etching) is the process of removing material by exposing the material to an ion bombardment to form a pattern. Unlike many [https://openwetware.org/wiki/Wet_Etching_-_Eric_Ying wet etching] techniques, dry etching is an anisotropic process, allowing for etching of flat, lateral walls. Most dry etch techniques employ reactive ion etching (RIE) which combines physical etching with chemical etching to achieve a balance of selectivity and anisotropy. The process of dry etching is widely employed in the microfabrication of circuitboards by etching of silicon substrates as well as in the design of microfluidic devices. In recent years, dry etching has mostly replaced wet etching for fabrication of circuitboards. | '''Dry etching''' (also known as plasma etching) is the process of removing material by exposing the material to an ion bombardment to form a pattern. Unlike many [https://openwetware.org/wiki/Wet_Etching_-_Eric_Ying wet etching] techniques, dry etching is an anisotropic process, allowing for etching of flat, lateral walls. Most dry etch techniques employ reactive ion etching (RIE) which combines physical etching with chemical etching to achieve a balance of selectivity and anisotropy. The process of dry etching is widely employed in the microfabrication of circuitboards by etching of silicon substrates as well as in the design of microfluidic devices using materials such as polydimethylsiloxane (PDMS).<sup>[11]</sup> In recent years, dry etching has mostly replaced wet etching for fabrication of circuitboards. | ||
| Line 50: | Line 50: | ||
#Plasma etching with a microwave cavity plasma disk source. (1989). Vacuum, 39(10), 997. http://dx.doi.org/10.1016/0042-207x(89)90957-3 | #Plasma etching with a microwave cavity plasma disk source. (1989). Vacuum, 39(10), 997. http://dx.doi.org/10.1016/0042-207x(89)90957-3 | ||
#"Dry Etching.” MIT Courses: Electrical and Computer Science (6.152J/3.155J). MIT Open CourseWare. ocw.mit.edu/courses/electrical-engineering-and-computer-science/6-152j-micro-nano-processing-technology-fall-2005/lecture-notes/lecture17.pdf. | #"Dry Etching.” MIT Courses: Electrical and Computer Science (6.152J/3.155J). MIT Open CourseWare. ocw.mit.edu/courses/electrical-engineering-and-computer-science/6-152j-micro-nano-processing-technology-fall-2005/lecture-notes/lecture17.pdf. | ||
#Tanaka, Hiro, et al. “Onset of Wiggling in a Microscopic Patterned Structure Induced by Intrinsic Stress During the Dry Etching Process.” Journal of Applied Mechanics, vol. 81, no. 9, Oct. 2014, p. 091009., doi | #Tanaka, Hiro, et al. “Onset of Wiggling in a Microscopic Patterned Structure Induced by Intrinsic Stress During the Dry Etching Process.” Journal of Applied Mechanics, vol. 81, no. 9, Oct. 2014, p. 091009., http://dx.doi.org/10.1115/1.4027914. | ||
#Etching Processes, MEMSnet.org. Retrieved 12 April 2018, from www.memsnet.org/mems/processes/etch.html. | #Etching Processes, MEMSnet.org. Retrieved 12 April 2018, from www.memsnet.org/mems/processes/etch.html. | ||
#“BYU Cleanroom.” STS Multiplex ICP Etch | BYU Cleanroom, cleanroom.byu.edu/sts_icp. | #“BYU Cleanroom.” STS Multiplex ICP Etch | BYU Cleanroom, cleanroom.byu.edu/sts_icp. | ||
#Roozeboom, F., et al. “Cyclic Etch/Passivation-Deposition as an All-Spatial Concept toward High-Rate Room Temperature Atomic Layer Etching.” ECS Journal of Solid State Science and Technology, vol. 4, no. 6, July 2015, doi | #Roozeboom, F., et al. “Cyclic Etch/Passivation-Deposition as an All-Spatial Concept toward High-Rate Room Temperature Atomic Layer Etching.” ECS Journal of Solid State Science and Technology, vol. 4, no. 6, July 2015, http://dx.doi.org/10.1149/2.0111506jss. | ||
#Garra, J., et al. “Dry Etching of Polydimethylsiloxane for Microfluidic Systems.” Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol. 20, no. 3, 2002, pp. 975–982., http://dx.doi.org/10.1116/1.1460896. | |||
